DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 701

IC H8S/2100 MCU FLASH 80QFP

DF2134AFA20V

Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2134AFA20V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
22.6.2
When set to user program mode, the chip can program and erase its flash memory by executing a
user program/erase control program. Therefore, on-board reprogramming of the on-chip flash
memory can be carried out by providing an on-board means of supplying programming data, and
storing a program/erase control program in part of the program area as necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 2 or 3).
In this mode, on-chip supporting modules other than flash memory operate as they normally
would in mode 2 and 3.
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory.
Figure 22.11 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Note: The watchdog timer should be activated to prevent overprogramming or overerasing
User Program Mode
due to program runaway, etc.
Section 22 ROM
Figure 22.11 User Program Mode Execution Procedure
Write the transfer program
(and the program/erase control program
if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
(H8S/2138 F-ZTAT A-Mask Version, H8S/2134 F-ZTAT A-Mask Version)
Transfer program/erase control
Execute program/erase control
program in RAM area
MD1, MD0 = 10, 11
program to RAM
Reset-start
program
Rev. 4.00 Jun 06, 2006 page 645 of 1004
REJ09B0301-0400

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