DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 813

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Maximum programming count (N) should be set according to the actual set value of (z1,
6. Maximum erase time (tE (max))
7. Maximum erase count (N) should be set according to the actual setting (z) to allow
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
The number of times for writing n
1
7
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
tP (max) = (wait time after P-bit setting (z1) + (z3))
z2, z3) to allow programming within the maximum programming time (tP (max)). The
wait time after P-bit setting (z1, z2, z3) must be changed with the value of the number
of writing times (n) as follows.
tE (max) = Waiting time after E-bit setting (z)
erase within the maximum erase time (tE (max)).
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
((N) – 6)
n
n
6
1000
z1 = 30 µs, z3 = 10 µs
z2 = 200 µs
Rev. 4.00 Jun 06, 2006 page 757 of 1004
Maximum erase count (N).
Section 25 Electrical Characteristics
6 + wait time after P-bit setting (z2)
REJ09B0301-0400