DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 678

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 21 ROM
Do not set or clear the SWE bit during program execution in flash memory: Clear the SWE
bit before executing a program or reading data in flash memory. When the SWE bit is set, data in
flash memory can be rewritten, but flash memory should only be accessed for verify operations
(verification during programming/erasing).
Do not use interrupts while flash memory is being programmed or erased: All interrupt
requests, including NMI, should be disabled to give priority to program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming. In on-
board programming, perform only one programming operation on a 32-byte programming unit
block. In programmer mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming. Touching either of these can
cause contact faults and write errors.
21.12
The mask ROM version dose not have the internal registers for flash memory control that are
provided in the F-ZTAT version. Table 21.22 lists the registers that are present in the F-ZTAT
version but not in the mask ROM version. If a register listed in table 21.22 is read in the mask
ROM version, an undefined value will be returned. Therefore, if application software developed
on the F-ZTAT version is switched to a mask ROM version product, it must be modified to ensure
that the registers in table 21.22 have no effect.
Table 21.22 Registers Present in F-ZTAT Version but Absent in Mask ROM Version
Register
Flash memory control register 1
Flash memory control register 2
Erase block register 1
Erase block register 2
Rev. 4.00 Jun 06, 2006 page 622 of 1004
REJ09B0301-0400
Note on Switching from F-ZTAT Version to Mask ROM Version
(Mask ROM Version, H8S/2138 F-ZTAT, H8S/2134 F-ZTAT, and H8S/2132 F-ZTAT)
Abbreviation
FLMCR1
FLMCR2
EBR1
EBR2
Address
H'FF80
H'FF81
H'FF82
H'FF83