DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 798

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Electrical Characteristics
Rev. 4.00 Jun 06, 2006 page 742 of 1004
REJ09B0301-0400
3. IRQ2 includes the ADTRG signal multiplexed on that pin.
4. P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull outputs in H8S/2138.
5. When ICE = 0. Low-level output when the bus drive function is selected is determined
6. The upper limit of the port 6 applied voltage is V
7. For flash memory program/erase operations, the applicable ranges are V
8. Current dissipation values are for V
9. The values are for V
An external pull-up resistor is necessary to provide high-level output from SCL0 and
P52/SCK0 and P97 (ICE = 0) high levels are driven by NMOS in H8S/2138.
SDA0 (ICE = 1).
separately.
selected, and the lower of V
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
3.6 V.
output pins unloaded and the on-chip pull-up MOSs in the off state.
RAM
V
CC
CC
< 2.7 V, V
+0.3 V and AV
IH
min = V
IH
min = V
CC
CC
+0.3 V when CIN input is selected.
–0.2 V and V
CC
CC
+0.3 V when CIN input is not
–0.2 V, and V
IL
max = 0.2 V with all
IL
max = 0.2 V.
CC
= 3.0 V to