DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 787

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

25.2.7
(1) The F-ZTAT and mask ROM versions have been confirmed as fully meeting the reference
(2) On-chip power supply step-down circuit
values for electrical characteristics shown in this manual. However, actual performance
figures, operating margins, noise margins, and other properties may vary due to differences in
the manufacturing process, on-chip ROM, layout patterns, etc.
When system evaluation testing is carried out using the F-ZTAT version, the same evaluation
tests should also be conducted for the mask ROM version when changing over to that version.
The H8S/2138 F-ZTAT does not incorporate an internal power supply step-down circuit.
When changing over to F-ZTAT versions or mask ROM versions incorporating an internal
step-down circuit, the V
Therefore, note that the circuit patterns differ between these two types of products.
3. Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Number of times when the wait time after P-bit setting (z) = 200 µs.
6. Maximum erase time (tE (max))
7. Number of times when the wait time after E-bit setting (z) = 10 ms.
Usage Note
The number of writes should be set according to the actual set value of (z) to allow
tE (max) = Wait time after E-bit setting (z)
not include the erase verification time.)
programming within the maximum programming time (tP (max)).
The number of erases should be set according to the actual set value of (z) to allow
erasing within the maximum erase time (tE (max)).
tP (max) = wait time after P-bit setting (z)
CC2
pin has the same pin location as the V
maximum erase count (N))
maximum programming count (N))
Rev. 4.00 Jun 06, 2006 page 731 of 1004
Section 25 Electrical Characteristics
CL
pin in a step-down circuit.
REJ09B0301-0400