DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 791
![IC H8S/2100 MCU FLASH 80QFP](/photos/12/21/122132/df2134afa20v_sml.jpg)
DF2134AFA20V
Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2134AFA20V.pdf
(1063 pages)
Specifications of DF2134AFA20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 791 of 1063
- Download datasheet (6Mb)
Item
Output high
voltage
Output low
voltage
Input
leakage
current
Three-state
leakage
current
(off state)
Input pull-up
MOS
current
Input
capacitance
Current
dissipation *
Analog
power
supply
current
7
All output pins
(except P97, and
P52 *
P97, P52 *
All output pins *
Ports 1 to 3
RES
STBY, NMI, MD1, MD0
Port 7
Ports 1 to 6, 8, 9
Ports 1 to 3
Port 6 (P6PUE = 0)
Port 6 (P6PUE = 1)
RES
NMI
P52, P97,
P42, P86
Input pins except
(4) above
Normal operation
Sleep mode
Standby mode *
During A/D, D/A
conversion
Idle
4
) *
5
4
5
8
(4)
Symbol Min
V
V
–I
C
I
Al
CC
I
I
OH
OL
in
P
in
TSI
CC
V
3.5
2.0
—
—
—
—
—
—
30
60
15
—
—
—
—
—
—
—
—
—
—
CC
–0.5
Rev. 4.00 Jun 06, 2006 page 735 of 1004
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
55
36
1.0
—
3.2
0.01
Section 25 Electrical Characteristics
Max
—
—
—
0.4
1.0
10.0
1.0
1.0
1.0
300
600
200
80
50
20
15
70
55
5.0
20.0
7.0
5.0
Unit
V
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
pF
pF
pF
pF
mA
mA
µA
µA
mA
µA
REJ09B0301-0400
Test
Conditions
I
I
I
V
5.5 V
I
I
V
V
V
AV
V
V
V
V
f = 1 MHz,
T
f = 20 MHz
f = 20 MHz
T
50°C < T
AV
2.0 V to 5.5 V
OH
OH
OH
OL
OL
a
a
CC
in
CC
in
in
CC
in
in
= 25°C
= 1.6 mA
= 10 mA
= –200 µA
= –1 mA
= –200 µA,
= 0.5 to
= 0.5 to
CC
= 0.5 to
= 0 V
= 0 V,
CC
= 4.5 to
–0.5 V
–0.5 V
50°C
=
–0.5 V
a
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