DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 662
![IC H8S/2100 MCU FLASH 80QFP](/photos/12/21/122132/df2134afa20v_sml.jpg)
DF2134AFA20V
Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2134AFA20V.pdf
(1063 pages)
Specifications of DF2134AFA20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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- Download datasheet (6Mb)
Section 21 ROM
Table 21.9 Software Protection
Item
SWE bit protection
Block specification
protection
21.8.3
In error protection, an error is detected when MCU runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is aborted. Aborting the program/erase operation
prevents damage to the flash memory due to overprogramming or overerasing.
If the MCU malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in
FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, EBR1, and EBR2
settings are retained, but program mode or erase mode is aborted at the point at which the error
occurred. Program mode or erase mode cannot be re-entered by re-setting the P or E bit. However,
PV and EV bit setting is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
Error protection is released only by a reset and in hardware standby mode.
Rev. 4.00 Jun 06, 2006 page 606 of 1004
REJ09B0301-0400
When flash memory is read during programming/erasing (including a vector read or instruction
fetch)
Immediately after exception handling (excluding a reset) during programming/erasing
When a SLEEP instruction (transition to software standby, sleep, subactive, subsleep, or watch
mode) is executed during programming/erasing
When the bus is released during programming/erasing
Error Protection
(Mask ROM Version, H8S/2138 F-ZTAT, H8S/2134 F-ZTAT, and H8S/2132 F-ZTAT)
Description
Clearing the SWE bit to 0 in FLMCR1 sets
the program/erase-protected state for all
blocks.
(Execute in on-chip RAM or external
memory.)
Erase protection can be set for individual
blocks by settings in erase block registers 1
and 2 (EBR1, EBR2).
Setting EBR1 and EBR2 to H'00 places all
blocks in the erase-protected state.
Program
Yes
—
Functions
Erase
Yes
Yes
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