UPD78F1174AGF-GAT-AX Renesas Electronics America, UPD78F1174AGF-GAT-AX Datasheet - Page 959

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UPD78F1174AGF-GAT-AX

Manufacturer Part Number
UPD78F1174AGF-GAT-AX
Description
MCU 16BIT 78K0R/KX3 128-LQFP
Manufacturer
Renesas Electronics America
Series
78K0R/Kx3r
Datasheet

Specifications of UPD78F1174AGF-GAT-AX

Core Processor
78K/0R
Core Size
16-Bit
Speed
20MHz
Connectivity
3-Wire SIO, EBI/EMI, I²C, LIN, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
111
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD78F1174AGF-GAT-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
2nd edition
Edition
Addition of 26.3 Securing of user resources
Addition of 27.3 Securing of user resources
Addition of addr5 to Table 28-2. Symbols in “Operation” Column
Change of operation of CALLT in Table 28-5. Operation List (15/17)
Change of description and Caution in 22.4.2 (1) (b)
Change of Figure 22-9. Timing of Low-Voltage Detector Interrupt Signal
Generation (Bit: LVISEL = 0, Option Byte: LVIOFF = 0) and addition of Note
Change of <4> in 22.4.2 (2)
Addition of Notes 3 to Figure 22-10. Timing of Low-Voltage Detector Interrupt
Signal Generation (Bit: LVISEL = 1)
Change of Figure 22-11. Example of Software Processing After Reset Release
Change of “MAX.” to “MIN.” of minimum pulse width
Change of 23.1 Regulator Overview
Addition of Notes 3 to Figure 23-1. Format of Regulator Mode Control Register
(RMC)
Change of description in 24.1.1 (2) 000C1H/010C1H
Change of Figure 24-2. Format of User Option Byte (000C1H/010C1H) and
Cautions 2
Change of 25.4.1 FLMD0 pin
Change of description in 25.4.5 REGC pin
Addition of Cautions 4 to 25.8 Flash Memory Programming by Self-
Programming and change of Remark
Change of Figure 25-10. Flow of Self Programming (Rewriting Flash Memory),
and addition of Remark
Absolute Maximum Ratings
• Change of conditions in Supply voltage (EV
• Change of conditions in Supply voltage (EV
• Change of Input voltage
• Change of Output voltage
• Change of rating of Analog output voltage (V
• Change of conditions in Output current, high (I
• Change of conditions in Output current, low (I
Change of Notes 1 in Internal Oscillator Characteristics
APPENDIX C REVISION HISTORY
User’s Manual U18432EJ5V0UD
Description
DD0
SS0
AO
OL1
OH1
, EV
, EV
)
)
)
SS1
DD1
)
)
CHAPTER 26 ON-CHIP
DEBUGGING
CHAPTER 27 BCD
CORRECTION CIRCUIT
CHAPTER 28
INSTRUCTION SET
CHAPTER 22 LOW-
VOLTAGE DETECTOR
CHAPTER 23
REGULATOR
CHAPTER 24 OPTION
BYTE
CHAPTER 25 FLASH
MEMORY
CHAPTER 29
ELECTRICAL
SPECIFICATIONS
(TARGET)
Chapter
(5/13)
957

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