DF70845AD80FPV Renesas Electronics America, DF70845AD80FPV Datasheet - Page 1274

• Manufacturer Part Number: DF70845AD80FPV
• Description: IC SUPERH MCU FLASH 112LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7080r

Specifications of DF70845AD80FPV

• Core Size: 32-Bit
• Program Memory Size: 512KB (512K x 8)
• Core Processor: SH-2
• Speed: 80MHz
• Connectivity: EBI/EMI, FIFO, I²C, SCI, SSU
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• No. Of I/o's: 76
• Ram Memory Size: 32KB
• Cpu Speed: 80MHz
• Digital Ic Case Style: LQFP
• Supply Voltage Range: 3V To 3.6V, 4.5V To 5.5V
• Embedded Interface Type: I2C, SCI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: R0K570865S001BE - KIT STARTER FOR SH7086R0K570865S000BE - KIT STARTER FOR SH7086HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Section 23 Flash Memory
• Using on-chip RAM to emulate flash memory
• Protection modes
• Programming/erasing time
• Number of programming operations
• Operating frequency for programming/erasing
Rev. 3.00 May 17, 2007 Page 1216 of 1582
REJ09B0181-0300
 User branching
Programming is performed in 128-byte units. Each round of programming consists of
application of the programming pulse, reading for verification, and several other steps. Erasing
is performed in block units and each round of erasing consists of several steps. A user-
processing routine can be executed between each round of erasing, and making the setting for
this is called the addition of a user branch.
By laying on-chip RAM over part of the flash memory, flash-memory programming can be
emulated in real time.
There are two modes of protection: software protection is applied by register settings and
hardware protection is applied by the level on the FWE pin. Protection of the flash memory
from programming or erasure can be selected.
When an abnormal state is detected, such as runaway execution of programming/erasing, the
protection modes initiate the transition to the error protection state and suspend
programming/erasing processing.
The time taken to program 128 bytes of flash memory in a single round is t
equivalent to t
The flash memory can be programmed up to N
The operating frequency for programming/erasing is a maximum of 40 MHz (Pφ).
P
/128 ms per byte. The erasing time is t
WEC
times.
E
s (typ.) per block.
P
ms (typ.), which is