ATSAM3S1BA-AU Atmel, ATSAM3S1BA-AU Datasheet - Page 315

IC MCU 32BIT 64KB FLASH 64LQFP

ATSAM3S1BA-AU

Manufacturer Part Number
ATSAM3S1BA-AU
Description
IC MCU 32BIT 64KB FLASH 64LQFP
Manufacturer
Atmel
Series
SAM3Sr
Datasheets

Specifications of ATSAM3S1BA-AU

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
64MHz
Connectivity
I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
47
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.62 V ~ 1.95 V
Data Converters
A/D 10x10/12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Controller Family/series
ATSAM3S
No. Of I/o's
47
Ram Memory Size
16KB
Cpu Speed
64MHz
No. Of Timers
6
Rohs Compliant
Yes
Processor Series
ATSAM3x
Core
ARM Cortex M3
3rd Party Development Tools
JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ATSAM3S-EK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATSAM3S1BA-AU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
ATSAM3S1BA-AUR
Manufacturer:
Atmel
Quantity:
10 000
19.2.5.3
19.2.5.4
6500C–ATARM–8-Feb-11
Flash Full Erase Command
Flash Lock Commands
Table 19-9.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 19-10. Full Erase Command
Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set
Lock command (SLB). With this command, several lock bits can be activated. A Bit Mask is pro-
vided as argument to the command. When bit 0 of the bit mask is set, then the first lock bit is
activated.
Step
5
6
7
...
n
n+1
n+2
n+3
n+4
n+5
...
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write Command (Continued)
MODE[3:0]
ADDR3
DATA
DATA
...
ADDR0
ADDR1
ADDR2
ADDR3
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[7:0]
Memory Address
Memory Address
Memory Address
Memory Address
*Memory Address++
*Memory Address++
...
Memory Address LSB
*Memory Address++
*Memory Address++
...
SAM3S Preliminary
DATA[15:0] or DATA[7:0]
EA
0
315

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