ATSAM3S1BA-AU Atmel, ATSAM3S1BA-AU Datasheet - Page 1040

• Manufacturer Part Number: ATSAM3S1BA-AU
• Description: IC MCU 32BIT 64KB FLASH 64LQFP
• Manufacturer: Atmel
• Series: SAM3Sr

Specifications of ATSAM3S1BA-AU

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 64MHz
• Connectivity: I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 47
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.62 V ~ 1.95 V
• Data Converters: A/D 10x10/12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Controller Family/series: ATSAM3S
• No. Of I/o's: 47
• Ram Memory Size: 16KB
• Cpu Speed: 64MHz
• No. Of Timers: 6
• Rohs Compliant: Yes
• Processor Series: ATSAM3x
• Core: ARM Cortex M3
• 3rd Party Development Tools: JTRACE-CM3, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: ATSAM3S-EK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Table 41-3.
Notes:
1040
Symbol
V
V
V
I
I
D
V
V
V
V
I
CD
CD
T
T
LOAD
LOAD-START
Q
ON
OFF
ACCURACY
VDDIN
VDDOUT
LINE
LINE-TR
LOAD
LOAD-TR
DROPOUT
IN
OUT
1. A 10µF or higher ceramic capacitor must be connected between VDDIN and the closest GND pin of the device.
2. To ensure stability, an external 2.2µF output capacitor, CD
3. Defined as the current needed to charge external bypass/decoupling capacitor network.
4. At power-up VDDIO needs to reach 0.6V before VDDIN reaches 1.0V
5. VDDIO voltage needs to be equal or below to (VDDIN voltage +0.5V)
SAM3S Preliminary
This large decoupling capacitor is mandatory to reduce startup current, improving transient response and noise rejection.
GND pin of the device. The ESR (Equivalent Series Resistance) of the capacitor must be in the range 0.1 to 10 ohms.
Solid tantalum, and multilayer ceramic capacitors are all suitable as output capacitor.
A 100nF bypass capacitor between VDDOUT and the closest GND pin of the device helps decreasing output noise and
improves the load transient response.
Parameter
DC Input Voltage Range
DC Output Voltage
Output Voltage Accuracy
Maximum DC Output
Current
Maximum Peak Current
during startup
Dropout Voltage
Line Regulation
Transient Line regulation
Load Regulation
Transient Load Regulation
Quiescent Current
Input Decoupling Capacitor
Output Decoupling
Capacitor
Turn on Time
Turn off Time
1.8V Voltage Regulator Characteristics
Conditions
(4) (5)
Normal Mode
Standby Mode
I
V
V
See Note
V
V
V
CD
V
I
V
I
tr = tf = 5 µs
CD
Normal Mode;
@ I
@ I
Standby Mode;
Cf. External Capacitor Requirements
Cf. External Capacitor Requirements
ESR
CD
power brownout detector supply rising
threshold)
CD
CD
Load
Load
Load
VDDIN
VDDIN
VDDIN
VDDIN
VDDIN
VDDIN
VDDIN
OUT
OUT
OUT
OUT
OUT
Load
Load
= 10% to 90% MAX
= 10% to 90% MAX
= 0.5mA to 150 mA
= 2.2µF, V
= 2.2µF, V
= 2.2µF
> 2V
≤ 2V
= 1.8V, I
from 2.7V to 3.6V; tr = tf = 5µs; I
≥ 2.2V;
≥ 2.2V;
from 2.7V to 3.6V; I
= 4.7µF
= 4.7 µF
= 0 mA
= 80 mA
(3)
.
Load
VDDOUT
VDDOUT
= 60 mA
reaches 1.8V (+/- 3%)
reaches V
OUT
Load
must be connected between the VDDOUT and the closest
MAX
TH+
(1)
(2)
Load
(core
Max
Min
1.8
0.1
-3
TBD
Typ
700
100
3.3
1.8
2.2
20
50
20
50
10
0
7
6500C–ATARM–8-Feb-11
1200
TBD
Max
400
100
100
100
200
3.6
80
40
50
50
10
10
40
3
1
Units
Ohm
mA
mA
mV
mV
mV
ms
µA
µF
µF
µs
µs
%
V
V