HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 756

MCU 5V 512K,PB-FREE 100-TQFP

HD64F3029XBL25V

Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3029XBL25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
21.1.6
Table 21.10 shows the flash memory characteristics.
Table 21.10 Flash Memory Characteristics
Conditions: V
Item
Programming time*
Erase time*
Programming time (total)*
Erase time (total)*
Programming and erase time (total)*
Reprogramming count
Data retention time*
Notes: *1 Programming time and erase time depend on data.
*2 Programming time and erase time do not include the data transfer time.
*3 Minimum value when all characteristics after reprogramming are guaranteed (the
*4 Characteristics when the flash memory is rewritten within the minimum reprogramming
Flash Memory Characteristics
1,
characteristics are guaranteed while the reprogramming count is from one to the
minimum reprogramming count).
count.
*
2,
T
Regular specifications)
*
4
a
CC
= 0°C to +75°C (operating temperature range for programming/erasing :
1,
= 3.0 V to 3.6 V, AV
1,
*
4
2,
*
2,
*
4
*
4
1,
*
2,
*
4
1,
*
2,
*
4
Symbol Min
t
t
N
t
CC
P
E
DRP
t
t
t
WEC
P
E
PE
= 3.0 V to 3.6 V, V
100*
10
3
Typ
3
80
500
1000
10
10
20
SS
Max
30
800
5000
10000 ms/64-kbyte
30
30
60
= AV
Rev. 2.0, 06/04, page 727 of 980
SS
Unit
ms/128 bytes
ms/4-kbyte
blocks
ms/32-kbyte
blocks
blocks
s/512
kbytes
s/512
kbytes
s/512
kbytes
times
year
= 0 V,
Notes
T
(when data is all 0)
T
T
a
a
a
= 25°C,
= 25°C
= 25°C

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