HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 644

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.5.2
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The overview flow is shown in figure 18.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset or hardware standby must not be executed. Doing so may cause
2
4
(Program end)
User Program Mode
Wait for program data
programming/erasing
(reset by boot mode)
Boot mode initiation
setting command
Wait for inquiry
3
command
Wait for
Figure 18.8 Overview of Boot Mode State Transition
user boot MAT erasure
(Program command reception)
All user MAT and
(Program data transmission)
(Erasure end)
(Bit rate adjustment)
Inquiry command response
Inquiry command reception
Read/check command
reception
H'00 to H'00 reception
H'00 transmission
(adjustment completed)
Command response
(Erasure command reception)
read/check command
Bit rate adjustment
Wait for erase-block
Processing of
inquiry setting
Processing of
command
data
Rev. 2.0, 06/04, page 615 of 980
(Erase-block specification)
1