HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 200

MCU 5V 512K,PB-FREE 100-TQFP

HD64F3029XBL25V

Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3029XBL25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
The basic CBS refresh cycle timing comprises three states: one RAS precharge cycle (T
and two RAS output cycle (T
precharge cycle. When the TPC bit is set to 1 in DRCRB, RAS signal output is delayed by one
cycle. This does not affect the timing of UCAS and LCAS output.
Note: * In address update mode 1, the area 2 start address is output.
Refresh request signal
and CMF bit setting signal
In address update mode 2, the address in the preceding bus cycle is retained.
RTCNT
RTCOR
Figure 6.28 CBR Refresh Timing (CSEL = 0, TPC = 0, RLW = 0)
Address bus*
(
PB
4
/PB
/
n
(
(
5
)
)
R1
Figure 6.27 Compare Match Timing
)
, T
R2
) states. Either one or two states can be selected for the RAS
T
Rp
N
High
Area 2 start address
High level
T
R1
N
Rev. 2.0, 06/04, page 171 of 980
T
R2
H'00
RP
) state,

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