HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 190

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

6.5.7
In the H8/3029, provision is made for the DRAM RAS precharge time by always inserting one
RAS precharge state (T
setting the TPC bit to 1 in DRCRB. The optimum number of T
the DRAM connected and the operating frequency of the H8/3029 chip. Figure 6.19 shows the
timing when two T
Read access
Write access
When the TCP bit is set to 1, two T
Precharge State Control
Note: n = 2 to 5
(
PB
PB
Figure 6.18 Basic Access Timing (CSEL = 0 in DRCRB)
p
states are inserted.
4
4
D
D
A
/
/
/PB
/PB
p
23
15
15
) when DRAM space is accessed. This can be changed to two T
(
(
(
to A
to D
to D
5
5
)
)
)
)
0
0
0
)
p
states are also used for CAS-before-RAS refresh cycles.
T
p
High level
Row
Tr
High level
p
cycles should be set according to
Rev. 2.0, 06/04, page 161 of 980
T
Column
c1
T
c2
p
states by