HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 192

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

The settings of the RCW bit in DRCRB and of ASTCR, WCRH, and WCRL do not affect refresh
cycles. Wait states cannot be inserted in a DRAM space access cycle by means of the WAIT pin.
6.5.9
When an access is made to DRAM space designated as a 16-bit-access area in ABWCR, column
address strobes (UCAS and LCAS) corresponding to the upper and lower halves of the external
data bus are output. In the case of
connected.
Either PB4 and PB5, or HWR and LWR, can be used as the UCAS and LCAS output pins, the
selection being made with the CSEL bit in DRCRB. Table 6.8 shows the CSEL bit settings and
corresponding output pin selections.
Read access
Write access
Byte Access Control and CAS
Figure 6.20 Example of Wait State Insertion Timing (CSEL = 0)
(
(
Note: n = 2 to 5
PB
PB
4
4
D
D
A
/PB
/PB
/
/
23
15
15
(
(
(
to A
5
to D
5
to D
)
)
)
)
0
0
0
)
CAS
CAS
CAS Output Pin
16-bit organization DRAM, the 2-CAS type can be
T
p
Tr
Row
Trw
High level
High level
T
c1
Rev. 2.0, 06/04, page 163 of 980
Column
Tw
Write data
Tw
Read data
T
c2