HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 11

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Rev. 2.0, 06/04, page vi of xxiv
Item
21.1.4 A/D Conversion
Characteristics
Table 21.8 A/D Conversion
Characteristics
21.2 Electrical Characteristics
of HD64F3029F25W and
HD64F3029TE25W
21.2.2 DC Characteristics
Table 21.12 DC Characteristics
Page
725
728
730
Revision (See Manual for Details)
Table amended
Title amended
Table and note amended
Item
Conver-
sion time:
134 states
Item
Conver-
sion time*:
70 states
Item
Current
dissipation*
Analog power
supply current
2
Normal
operation
Sleep mode
Module
standby mode
Standby mode
Flash memory
programming/
erasing*
During A/D
conversion
During A/D
and D/A
conversion
Idle
Nonlinearity error
Offset error
Full-scale error
Quantization error
Absolute accuracy
Nonlinearity error
Offset error
Full-scale error
Quantization error
Absolute accuracy
4
Symbol
I
AI
CC
*
CC
3
Min
—
—
—
—
—
—
—
—
—
—
15(3.3V)
Typ
2.0(3.3V)
17(3.3V)
16(3.3V)
—
30(3.3V)
0.6
0.6
0.02(3.3V) 5.0
—
Max
38
35
34
70
100
48
1.5
1.5
15
±3.5
±7.5
Max
±3.5
±3.5
±0.5
±4.0
Max
±7.5
±7.5
±0.5
±8.0
Unit
mA
mA
mA
µA
µA
mA
mA
mA
µA
µA
Test
Conditions
f = 25 MHz
f = 25 MHz
f = 25 MHz
f = 25 MHz
(reference
values)
at DASTE = 0
at DASTE = 0
T
50˚C
T
50˚C
a
a
50˚C
50˚C
T
T
a
a