HD64F7047F50V Renesas Electronics America, HD64F7047F50V Datasheet - Page 613

• Manufacturer Part Number: HD64F7047F50V
• Description: IC H8 MCU FLASH 256K 100TQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7047r

Specifications of HD64F7047F50V

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: CAN, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Package: 100PQFP
• Family Name: SuperH
• Maximum Speed: 50 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 32 Bit
• Number Of Programmable I/os: 53
• Interface Type: CAN/SCI
• On-chip Adc: 16-chx10-bit
• Number Of Timers: 7
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

19.10
In PROM programmer mode, a PROM programmer can be used to perform programming/erasing
via a socket adapter, just as for a discrete flash memory. Use a PROM programmer that supports
the Renesas 256-kbyte flash memory on-chip MCU device type (FZTAT256V3A).
19.11
• Setting module standby mode
19.12
Please note the following when converting the F-ZTAT versions to the mask-ROM versions, with
using the F-ZTAT application software.
In the mask-ROM version, addresses of the flash memory registers (see appendix A.1, Register
Addresses (Order of Address)) return undefined value if read.
When the F-ZTAT application software is used in the mask-ROM versions, the FWP pin level
cannot be determined. When converting the program, make sure the reprogramming
(erasing/programming) part of the flash memory and the RAM emulation part not to be initiated.
In the mask-ROM versions, boot mode pin setting should not be performed.
Note: This difference applies to all the F-ZTAT versions and all the mask-ROM versions that
19.13
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Appling excessive
voltage beyond the specification can permanently damage the device. Use an EPROM
programmer that supports the Renesas' microcomputer device having on-chip 256-kbyte flash
memory. Use only the specified socket adapter, otherwise a serious damage may occur.
Powering on and off (see figures 19.11 to 19.13): Do not apply a low level to the FWP pin until
V
CC
For flash memory, this module can be disabled/enabled by the module standby control register.
Flash memory operation is enabled for the initial value. Accessing flash memory is disabled by
setting module standby mode. For more information, see section 24, Power-Down Modes.
has been stabilized. Also, drive the FWP pin high before turning off V
have different ROM size.
PROM Programmer Mode
Notes on Use
Notes when Converting the F-ZTAT Versions to the Mask-ROM
Versions
Notes on Flash Memory Programming and Erasing
Rev. 2.00, 09/04, page 571 of 720
CC
. If V
CC
is to be