DF61654N50FTV Renesas Electronics America, DF61654N50FTV Datasheet - Page 847

IC H8SX/1654 MCU FLASH 120TQFP

DF61654N50FTV

Manufacturer Part Number
DF61654N50FTV
Description
IC H8SX/1654 MCU FLASH 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of DF61654N50FTV

Core Processor
H8SX
Core Size
32-Bit
Speed
50MHz
Connectivity
I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, PWM, WDT
Number Of I /o
75
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK1657 - DEV EVAL KIT FOR H8SX/1657
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF61654N50FTV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
20.7.3
Programming/erasing of the user MAT is executed by downloading an on-chip program. The
programming/erasing flow is shown in figure 20.11.
Since high voltage is applied to the internal flash memory during programming/erasing, a
transition to the reset state or hardware standby mode must not be made during
programming/erasing. A transition to the reset state or hardware standby mode during
programming/erasing may damage the flash memory. If a reset is input, the reset must be released
after the reset input period (period of RES = 0) of at least 100 µs.
User Program Mode
transferred to the on-chip
program data is prepared
Programming/erasing
procedure program is
Programming/erasing
Programming/erasing
When programming,
RAM and executed
start
end
Figure 20.11 Programming/Erasing Flow
1.
2.
3.
4.
Exit RAM emulation mode beforehand. Download is not allowed
in emulation mode.
When the program data is adjusted in emulation mode, select
the download destination specified by FTDAR carefully. Make
sure that the download area does not overlap the emulation
area.
Programming/erasing is executed only in the on-chip RAM.
After programming/erasing is finished, protect the flash memory
by the hardware protection.
Section 20 Flash Memory (0.18-µm F-ZTAT Version)
Rev.1.00 Sep. 08, 2005 Page 797 of 966
REJ09B0219-0100

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