DF61654N50FTV Renesas Electronics America, DF61654N50FTV Datasheet - Page 815

• Manufacturer Part Number: DF61654N50FTV
• Description: IC H8SX/1654 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61654N50FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 75
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

20.3
20.3.1
Figure 20.3 shows the block structure of the 384-kbyte user MAT. The heavy-line frames indicate
the erase blocks. The thin-line frames indicate the programming units and the values inside the
frames stand for the addresses. The user MAT is divided into five 64-kbyte blocks, one 32-kbyte
block, and eight 4-kbyte blocks. The user MAT can be erased in these divided block units.
Programming is done in 128-byte units starting from where the lower address is H'00 or H'80.
RAM emulation can be performed in the eight 4-kbyte blocks.
EB0
Erase unit: 4 kbytes
EB1
Erase unit: 4 kbytes
EB2
Erase unit: 4 kbytes
EB3
Erase unit: 4 kbytes
EB4
Erase unit: 4 kbytes
EB5
Erase unit: 4 kbytes
EB6
Erase unit: 4 kbytes
EB7
Erase unit: 4 kbytes
EB8
Erase unit: 32 kbytes
EB9
Erase unit: 64 kbytes
EB10
EB13
Erase unit: 64 kbytes
Block Structure
Block Diagram of H8SX/1653
Figure 20.3 Block Structure of User MAT
H'0AFF80 H'0AFF81 H'0AFF82
H'000F80 H'000F81 H'000F82
H'001F80 H'001F81 H'001F82
H'002F80 H'002F81 H'002F82
H'003F80 H'003F81 H'003F82
H'004F80 H'004F81 H'004F82
H'005F80 H'005F81 H'005F82
H'006F80 H'006F81 H'006F82
H'007F80 H'007F81 H'007F82
H'00FF80 H'00FF81 H'00FF82
H'01FF80 H'01FF81 H'01FF82
H'05FF80 H'05FF81 H'05FF82
H'000000 H'000001 H'000002
H'001000 H'001001 H'001002
H'002000 H'002001 H'002002
H'003000 H'003001 H'003002
H'004000 H'004001 H'004002
H'005000 H'005001 H'005002
H'006000 H'006001 H'006002
H'007000 H'007001 H'007002
H'008000 H'008001 H'008002
H'010000 H'010001 H'010002
H'020000 H'020001 H'020002
H'050000 H'050001 H'050002
Section 20 Flash Memory (0.18-µm F-ZTAT Version)
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
– – – – – – – – – – – – – –
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Programming unit: 128 bytes
Rev.1.00 Sep. 08, 2005 Page 765 of 966
REJ09B0219-0100
H'0AFFFF
H'000FFF
H'001FFF
H'002FFF
H'003FFF
H'004FFF
H'005FFF
H'006FFF
H'007FFF
H'00FFFF
H'01FFFF
H'05FFFF
H'00007F
H'00107F
H'00207F
H'00307F
H'00407F
H'00507F
H'00607F
H'00707F
H'00807F
H'01007F
H'02007F
H'05007F