DF61654N50FTV Renesas Electronics America, DF61654N50FTV Datasheet - Page 262

IC H8SX/1654 MCU FLASH 120TQFP

DF61654N50FTV

Manufacturer Part Number
DF61654N50FTV
Description
IC H8SX/1654 MCU FLASH 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of DF61654N50FTV

Core Processor
H8SX
Core Size
32-Bit
Speed
50MHz
Connectivity
I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, PWM, WDT
Number Of I /o
75
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK1657 - DEV EVAL KIT FOR H8SX/1657
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF61654N50FTV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
(3)
If an external read occurs after an external write while bit IDLS2 in IDLCR is set to 1, idle cycles
specified by bits IDLCA1 and IDLCA0 are inserted at the start of the read cycle (n = 0 to 7).
Figure 6.39 shows an example of the operation in this case. In this example, bus cycle A is a CPU
write cycle and bus cycle B is a read cycle from the SRAM. In (a), an idle cycle is not inserted,
and a conflict occurs in bus cycle B between the CPU write data and read data from an SRAM
device. In (b), an idle cycle is inserted, and a data conflict is prevented.
Rev.1.00 Sep. 08, 2005 Page 212 of 966
REJ09B0219-0100
B
Address bus
CS (area A)
CS (area B)
RD
LLWR
Data bus
Read after Write
Figure 6.39 Example of Idle Cycle Operation (Read after Write)
(a) No idle cycle inserted
Bus cycle A
T
1
(IDLS2 = 0)
T
2
Output floating
time is long.
T
3
Bus cycle B
T
1
T
2
Data conflict
T
(IDLS2 = 1, IDLCA1 = 0, IDLCA0 = 0)
Bus cycle A
1
T
2
(b) Idle cycle inserted
T
3
T
Bus cycle B
i
T
1
T
2

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