R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 324

MCU 128KKB FLASH 48K 144-LQFP

R4F24568NVFQV

Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheets

Specifications of R4F24568NVFQV

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24568NVFQV
Manufacturer:
REA
Quantity:
15
Part Number:
R4F24568NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
(5)
In a DRAM space access following a normal space access, the settings of bits ICIS2, ICIS1,
ICIS0, and IDLC in BCR are valid. However, in the case of consecutive reads in different areas,
for example, if the second read is a full access to DRAM space, only a T
T
In burst access in RAS down mode, the settings of bits ICIS2, ICIS1, ICIS0, and IDLC are valid
and an idle cycle is inserted. The timing in this case is illustrated in figures 6.82 and 6.83.
Page 294 of 1392
i
cycle is not. The timing in this case is shown in figure 6.81.
Idle Cycle in Case of DRAM Space Access after Normal Space Access
Figure 6.81 Example of DRAM Full Access after External Read
Address bus
Data bus
RD
φ
T
1
External read
T
2
(CAST = 0)
T
3
T
p
DRAM space read
T
r
T
H8S/2456, H8S/2456R, H8S/2454 Group
c1
T
p
c2
cycle is inserted, and a
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010

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