R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 326
![MCU 128KKB FLASH 48K 144-LQFP](/photos/28/61/286117/144-lqfp__plqp0144ka-a_sml.jpg)
R4F24568NVFQV
Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Specifications of R4F24568NVFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Quantity
Price
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Part Number:
R4F24568NVFQV
Manufacturer:
REA
Quantity:
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Part Number:
R4F24568NVFQV
Manufacturer:
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Section 6 Bus Controller (BSC)
(6)
In a continuous synchronous DRAM space access following a normal space access, the settings of
bits ICIS2, ICIS1, ICIS0, and IDLC in BCR are valid. However, in the case of consecutive reads
in different areas, for example, if the second read is a full access to continuous synchronous
DRAM space, only Tp cycle is inserted, and Ti cycle is not. The timing in this case is shown in
figure 6.84.
Note: The synchronous DRAM interface is not supported by the H8S/2456 Group and H8S/2454
Page 296 of 1392
Idle Cycle in Case of Continuous Synchronous DRAM Space Access after Normal
Space Access
Figure 6.84 Example of Synchronous DRAM Full Access after External Read
Group.
Precharge-sel
DQMU, DQML
Address bus
Data bus
CKE
CAS
RAS
WE
RD
φ
External space read
T
1
NOP
T
(CAS Latency 2)
2
T
3
PALL ACTV
Column
address
T
Synchronous DRAM space read
p
address
address
Row
Row
T
r
READ
T
c1
Column address
H8S/2456, H8S/2456R, H8S/2454 Group
T
cl
NOP
REJ09B0467-0350 Rev. 3.50
T
c2
Jul 07, 2010
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