R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 184
R4F24568NVFQV
Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Specifications of R4F24568NVFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 6 Bus Controller (BSC)
6.2
Table 6.1 shows the pin configuration of the bus controller.
Table 6.1
Page 154 of 1392
Name
Address strobe
Address hold
Read
High write/write enable
Low write
Chip select 0
Chip select 1
Chip select 2/
row address strobe 2/
row address strobe *
Chip select 3/
row address strobe 3/
column address strobe *
Input/Output Pins
Pin Configuration
1
1
Symbol
AS
AH
RD
HWR/WE
LWR
CS0
CS1
CS2/
RAS2/
RAS *
CS3/
RAS3/
CAS *
1
1
I/O
Output
Output
Output
Output
Output
Output
Output
Output
Output
Function
Strobe signal indicating that normal space
is accessed and address output on
address bus is enabled.
Signal indicating the timing for latching the
address when the address/data
multiplexed I/O space is set.
Strobe signal indicating that normal space
is being read.
Strobe signal indicating that normal space
is written to, and upper half (D15 to D8) of
data bus is enabled or DRAM space write
enable signal.
Strobe signal indicating that normal space
is written to, and lower half (D7 to D0) of
data bus is enabled.
Strobe signal indicating that area 0 is
selected.
Strobe signal indicating that area 1 is
selected
Strobe signal indicating that area 2 is
selected, DRAM row address strobe signal
when area 2 is DRAM space or areas 2 to
5 are set as continuous DRAM space, or
row address strobe signal of the
synchronous DRAM when the
synchronous DRAM interface is selected.
Strobe signal indicating that area 3 is
selected, DRAM row address strobe signal
when area 3 is DRAM space, or column
address strobe signal of the synchronous
DRAM when the synchronous DRAM
interface is selected.
H8S/2456, H8S/2456R, H8S/2454 Group
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010
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