R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 296
![MCU 128KKB FLASH 48K 144-LQFP](/photos/28/61/286117/144-lqfp__plqp0144ka-a_sml.jpg)
R4F24568NVFQV
Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Specifications of R4F24568NVFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Quantity
Price
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Part Number:
R4F24568NVFQV
Manufacturer:
REA
Quantity:
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Company:
Part Number:
R4F24568NVFQV
Manufacturer:
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Quantity:
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Section 6 Bus Controller (BSC)
6.8.10
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (Tc1) that is
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 6.60 shows the write access timing when the CAS
latency control cycle is disabled.
Page 266 of 1392
Figure 6.60 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
DQMU, DQML
Precharge-sel
Address bus
Bus Cycle Control in Write Cycle
SDRAMφ
Data bus
CKE
RAS
CAS
WE
φ
Column address
PALL
T
p
Row address
Row address
(SDWCD = 1)
ACTV
T
r
High
NOP
T
c1
Column address
H8S/2456, H8S/2456R, H8S/2454 Group
T
WRIT
c2
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010
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