R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 279

MCU 128KKB FLASH 48K 144-LQFP

R4F24568NVFQV

Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheets

Specifications of R4F24568NVFQV

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R4F24568NVFQV
Manufacturer:
REA
Quantity:
15
Part Number:
R4F24568NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
H8S/2456, H8S/2456R, H8S/2454 Group
In some DRAMs provided with a self-refresh mode, the RAS signal precharge time immediately
after self-refreshing is longer than the normal precharge time. A setting can be made in bits
TPCS2 to TPCS0 in REFCR to make the precharge time immediately after self-refreshing from 1
to 7 states longer than the normal precharge time. In this case, too, normal precharging is
performed according to the setting of bits TPC1 and TPC0 in DRACCR, and therefore a setting
should be made to give the optimum post-self-refresh precharge time, including this time. Figure
6.52 shows an example of the timing when the precharge time immediately after self-refreshing is
extended by 2 states.
REJ09B0467-0350 Rev. 3.50
Jul 07, 2010
φ
CSn (RASn)
UCAS, LCAS
HWR (WE)
Note: n = 2 to 5
T
Rp
Figure 6.51 Self-Refresh Timing
T
Rr
High
Software
standby
Section 6 Bus Controller (BSC)
T
Rc3
Page 249 of 1392

Related parts for R4F24568NVFQV