R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 260
![MCU 128KKB FLASH 48K 144-LQFP](/photos/28/61/286117/144-lqfp__plqp0144ka-a_sml.jpg)
R4F24568NVFQV
Manufacturer Part Number
R4F24568NVFQV
Description
MCU 128KKB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Specifications of R4F24568NVFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
32MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 6 Bus Controller (BSC)
6.7.7
If the RAST bit is set to 1 in DRAMCR, the RAS signal goes low from the beginning of the T
state, and the row address hold time and DRAM read access time are changed relative to the fall of
the RAS signal. Use the optimum setting according to the DRAM connected and the operating
frequency of this LSI. Figure 6.35 shows an example of the timing when the RAS signal goes low
from the beginning of the T
Page 230 of 1392
Read
Write
Note: n = 2 to 5
Figure 6.35 Example of Access Timing when RAS Signal Goes Low from Beginning
Row Address Output State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
T
of T
p
Row address
r
State (CAST = 0)
T
r
High
High
T
c1
H8S/2456, H8S/2456R, H8S/2454 Group
Column address
REJ09B0467-0350 Rev. 3.50
T
c2
Jul 07, 2010
r
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