R4F24568NVFQV Renesas Electronics America, R4F24568NVFQV Datasheet - Page 311

• Manufacturer Part Number: R4F24568NVFQV
• Description: MCU 128KKB FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24568NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2456, H8S/2456R, H8S/2454 Group
Section 6 Bus Controller (BSC)
6.8.14
Mode Register Setting of Synchronous DRAM
To use synchronous DRAM, mode must be set after power-on. To set mode, set the RMTS2 to
RMTS0 bits in DRAMCR to H'5 and enable the synchronous DRAM mode register setting. After
that, access the continuous synchronous DRAM space in bytes. When the value to be set in the
synchronous DRAM mode register is X, value X is set in the synchronous DRAM mode register
by writing to the continuous synchronous DRAM space of address H'400000 + X for 8-bit bus
configuration synchronous DRAM and by writing to the continuous synchronous DRAM space of
address H'400000 + 2X for 16-bit bus configuration synchronous DRAM.
The value of the address signal is fetched at the issuance time of the MRS command as the setting
value of the mode register in the synchronous DRAM. Mode of burst read/burst write in the
synchronous DRAM is not supported by this LSI. For setting the mode register of the synchronous
DRAM, set the burst read/single write with the burst length of 1. Figure 6.71 shows the setting
timing of the mode in the synchronous DRAM.
T
T
T
T
p
r
c1
c2
φ
SDRAMφ
Address bus
Mode setting value
Mode setting value
Precharge-sel
RAS
CAS
WE
CKE
High
PALL
NOP
MRS
NOP
Figure 6.71 Synchronous DRAM Mode Setting Timing
REJ09B0467-0350 Rev. 3.50
Page 281 of 1392
Jul 07, 2010