D6417729RHF200BV Renesas Electronics America, D6417729RHF200BV Datasheet - Page 375

• Manufacturer Part Number: D6417729RHF200BV
• Description: IC SUPER H MPU ROMLESS 208QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of D6417729RHF200BV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.85 V ~ 2.15 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 208-QFP Exposed Pad, 208-eQFP, 208-HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Figure 11.15 shows the burst read timing when RCD is set to 1, A3W1 and A3W0 are set to 10,
and TPC is set to 1.
The BS cycle, which is asserted for one cycle at the start of a bus cycle for normal access space, is
asserted in each of cycles Td1–Td4 in a synchronous DRAM cycle. When a burst read is
performed, the address is updated each time CAS is asserted. As the unit of burst transfer is 16
bytes, address updating is performed for A3 and A2 only (A3, A2, and A1 in the case of a 16-bit
bus width). The order of access is as follows: in a fill operation in the event of a cache miss, the
missed data is read first, then 16-byte boundary data including the missed data is read in
wraparound mode.
CKIO
A25 to A16,
A13
A12
A15, A14,
A11 to A0
CS2 or CS3
RAS3x
CASx
RD/WR
DQMxx
D31 to D0
BS
Figure 11.15 Synchronous DRAM Burst Read Wait Specification Timing
Tr
Trw
Tc1
Tc2
Tc3/Td1 Tc4/Td2
Rev. 5.0, 09/03, page 327 of 806
Td3
Td4
Tpc