D6417729RHF200BV Renesas Electronics America, D6417729RHF200BV Datasheet - Page 317

• Manufacturer Part Number: D6417729RHF200BV
• Description: IC SUPER H MPU ROMLESS 208QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of D6417729RHF200BV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.85 V ~ 2.15 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 208-QFP Exposed Pad, 208-eQFP, 208-HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

11.1
The bus state controller (BSC) divides physical address space and output control signals for
various types of memory and bus interface specifications. BSC functions enable the chip to link
directly with synchronous DRAM, SRAM, ROM, and other memory storage devices without an
external circuit. The BSC also allows direct connection to PCMCIA interfaces, simplifying system
design and allowing high-speed data transfers in a compact system.
11.1.1
The BSC has the following features:
Physical address space is divided into six areas
Direct interface to synchronous DRAM
Burst ROM interface
PCMCIA direct-connection interface
A maximum 64 Mbytes for each of the six areas, 0, 2–6
Area bus width can be selected by register (area 0 is set by external pin)
Wait states can be inserted using the WAIT pin
Wait state insertion can be controlled through software. Register settings can be used to
specify the insertion of 1–10 cycles independently for each area (1–38 cycles for areas 5
and 6 and the PCMCIA interface only)
The type of memory connected can be specified for each area, and control signals are
output for direct memory connection
Wait cycles are automatically inserted to avoid data bus conflict for continuous memory
accesses to different areas or writes directly following reads in the same area
Multiplexes row/column addresses according to synchronous DRAM capacity
Supports burst operation
Supports bank active mode
Has both auto-refresh and self-refresh functions
Controls timing of synchronous DRAM direct-connection control signals according to
register setting
Insertion of wait states controllable through software
Register setting control of burst transfers
Insertion of wait states controllable through software
Bus sizing function for I/O bus width (only in little-endian mode)
Overview
Features
Section 11 Bus State Controller (BSC)
Rev. 5.0, 09/03, page 269 of 806