D6417729RHF200BV Renesas Electronics America, D6417729RHF200BV Datasheet - Page 373

• Manufacturer Part Number: D6417729RHF200BV
• Description: IC SUPER H MPU ROMLESS 208QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of D6417729RHF200BV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 96
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.85 V ~ 2.15 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 208-QFP Exposed Pad, 208-eQFP, 208-HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Table 11.14 Example of Correspondence between SH7729R and Synchronous DRAM
SH7729R Address Pin
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Burst Read: In the example in figure 11.14 it is assumed that four 2M
DRAMs are connected and a 32-bit data width is used, and the burst length is 1. Following the Tr
cycle in which ACTV command output is performed, a READ command is issued in the Tc1, Tc2,
and Tc3 cycles, and a READA command in the Tc4 cycle, and the read data is accepted at the
rising edge of the external command clock (CKIO) from cycle Td1 to cycle Td4. The Tpc cycle is
used to wait for completion of auto-precharge based on the READA command inside the
synchronous DRAM; no new access command can be issued to the same bank during this cycle,
but access to synchronous DRAM for another area is possible. In the SH7729R, the number of
Tpc cycles is determined by the TPC bit specification in MCR, and commands cannot be issued
for the same synchronous DRAM during this interval.
The example in figure 11.14 shows the basic timing. To connect low-speed synchronous DRAM,
the cycle can be extended by setting WCR2 and MCR bits. The number of cycles from the ACTV
command output cycle, Tr, to the READ command output cycle, Tc1, can be specified by the
RCD bits in MCR, with values of 0 to 3 specifying 1 to 4 cycles, respectively. In case of 2 or more
cycles, a Trw cycle, in which an NOP command is issued for the synchronous DRAM, is inserted
between the Tr cycle and the Tc cycle. The number of cycles from READ and READA command
output cycles Tc1-Tc4 to the first read data latch cycle, Td1, can be specified as 1 to 3 cycles
Address Pins (AMX [3:0] = 0100 (32-Bit Bus Width))
RAS Cycle
A23
A22
A21
A20
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A0
CAS Cycle
A23
A22
A13
L/H
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Synchronous DRAM Address Pin
A13(BA1)
A12(BA0)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Not used
Not used
Rev. 5.0, 09/03, page 325 of 806
Function
BANK select bank address
Address
Address precharge setting
Address
8-bit synchronous