R5F21238DFP#U0 Renesas Electronics America, R5F21238DFP#U0 Datasheet - Page 472
![IC R8C/23 MCU FLASH 48-LQFP](/photos/12/38/123822/r5f21238dfp_u0_sml.jpg)
R5F21238DFP#U0
Manufacturer Part Number
R5F21238DFP#U0
Description
IC R8C/23 MCU FLASH 48-LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/23r
Specifications of R5F21238DFP#U0
Core Size
16/32-Bit
Program Memory Size
64KB (64K x 8)
Peripherals
POR, Voltage Detect, WDT
Core Processor
R8C
Speed
20MHz
Connectivity
CAN, I²C, LIN, SIO, SSU, UART/USART
Number Of I /o
41
Program Memory Type
FLASH
Ram Size
3K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
No. Of I/o's
41
Ram Memory Size
3KB
Cpu Speed
20MHz
No. Of Timers
4
Digital Ic Case Style
LQFP
Embedded Interface Type
CAN, I2C, UART
Rohs Compliant
Yes
Cpu Family
R8C
Device Core Size
16b
Frequency (max)
20MHz
Interface Type
I2C/UART
Total Internal Ram Size
3KB
# I/os (max)
41
Number Of Timers - General Purpose
5
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
3V
On-chip Adc
12-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Package Type
LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
RCDK8C - KIT DEV EVAL FOR CAN R8C/23R0K521237S000BE - KIT DEV RSK R8C/23R0E521237CPE00 - EMULATOR COMPACT R8C/20/21/22/23
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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R8C/22 Group, R8C/23 Group
Rev.2.00 Aug 20, 2008
REJ09B0251-0200
Table 21.5
NOTES:
−
−
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Minimum endurance to guarantee all electrical characteristics after program and erase (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
5. In a system that executes multiple programming operations, the actual erasure endurance can be reduced by writing to
6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125 ° C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times.
For example, if 1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is
erased, the programming/erasure endurance still stands at one. However, the same address must not be programmed more
than once per erase operation (overwriting prohibited).
are the same as that in program ROM.
sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. For
example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to
128 groups before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B
can further reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block
and limit the number of erase operations to a certain number.
least three times until the erase error does not occur.
CC
Program/erase endurance
Byte program time
(Program/erase endurance ≤ 1,000 times)
Byte program time
(Program/erase endurance > 1,000 times)
Block erase time
(Program/erase endurance ≤ 1,000 times)
Block erase time
(Program/erase endurance > 1,000 times)
Time delay from suspend request until
erase suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
= 2.7 to 5.5 V at Topr = -40 to 85 ° C (D, J version) / -40 to 125 ° C (K version), unless otherwise specified.
Flash Memory (Data Flash Block A, Block B) Electrical Characteristics
(9)
Parameter
Page 450 of 501
(2)
Ambient temperature = 55 ° C
Conditions
10,000
Min.
650
2.7
2.7
-40
20
−
−
−
−
−
0
−
(3)
21. Electrical Characteristics
Typ.
0.2
0.3
Standard
50
65
−
−
−
−
−
−
−
−
−
97 + CPU clock
3 + CPU clock
×
×
(4)
Max.
6 cycle
4 cycle
85
400
5.5
5.5
−
−
9
−
−
−
−
(8)
times
year
Unit
µ s
µ s
µ s
µ s
ns
µ s
° C
V
V
s
s
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