R8A77850ANBGV Renesas Electronics America, R8A77850ANBGV Datasheet - Page 549

IC SUPERH MPU ROMLESS 436-BGA

R8A77850ANBGV

Manufacturer Part Number
R8A77850ANBGV
Description
IC SUPERH MPU ROMLESS 436-BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet

Specifications of R8A77850ANBGV

Core Processor
SH-4A
Core Size
32-Bit
Speed
600MHz
Connectivity
Audio Codec, MMC, Serial Sound, SCI, SIO, SPI, SSI
Peripherals
DMA, POR, WDT
Number Of I /o
108
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1 V ~ 1.2 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
436-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R8A77850ANBGV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
10. Writing to DBMRCNT issues the MRS command to the SDRAM and sets the various
11. Writing to the CMD bits in DBCMDCNT issues the PALL command.
12. Writing to the CMD bits in DBCMDCNT issues the REF command. Following that, writing to
13. Writing to DBMRCNT issues the MRS command to the SDRAM. Other than the parameter
14. After a wait of at least 200 clock cycles has elapsed via the software, writing to DBMRCNT
15. A 1 (access enabled) is set in the ACEN bit in the SDRAM operation enable register (DBEN).
16. Enter settings in the SDRAM refresh control register 1 (DBRFCNT1) and the SDRAM refresh
17. Set the ARFEN bit in DBRFCNT0 to 1 (automatic issue of auto-refresh enabled). Normal
12.5.4
Self-refreshing helps to reduce the amount of power consumed by the SDRAM and makes it
possible to change the clock frequency and stop the clock.
Also, using the self-refresh operation in combination with power supply control makes it possible
to operate in power supply backup mode, with all power supplies other than that of the SDRAM
off. For details on power supply backup mode, refer to section 12.5.10, DDR2-SDRAM Power
Supply Backup Function.
(1)
If it is not necessary to access the SDRAM, the SDRAM can be put in self-refresh mode to reduce
power consumption while still retaining data contents.
Shifting to self-refresh mode is done by writing 1 to the self-refresh enable bit (SRFEN) in the
SDRAM refresh control register 0 (DBRFCNT0). Self-refresh mode can be cancelled by writing 0
to the SRFEN bit.
parameters. At this point, the operating mode is set to normal mode, the DLL reset is set to
reset, the burst length is set to 4, and the burst type is set to sequential. The additive latency
should be set to 0, and CAS latency and write recovery times should be set to match the
settings of DBTR0 and DBTR1.
the CMD bits in DBCMDCNT is done once again and the REF command is issued.
that cancels a DLL reset in the SDRAM, the parameters are the same as the values set in item
10 above.
issues the EMRS(1) command to the SDRAM and issues the OCD default command.
Subsequently, writing is done to DBMRCNT, the EMRS(1) command is issued, and the OCD
calibration mode exit command is issued.
control register 2 (DBRFCNT2), and set the auto-refresh interval and other parameters.
access is subsequently enabled.
Self-Refreshing (without Stopping the Clock)
Self-Refresh Operation
Rev.1.00 Jan. 10, 2008 Page 517 of 1658
12. DDR2-SDRAM Interface (DBSC2)
REJ09B0261-0100

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