DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 532

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

18.2
Table 18.2 DC Characteristics (1)
Conditions: V
Notes: 1. When used as IRQ0 to IRQ7.
Rev. 2.00, 03/04, page 498 of 534
Item
Schmitt
trigger input
voltage
Input high
voltage
Input low
voltage
Output high
voltage
Output low
voltage
Input
leakage
current
2. When used as other than IRQ0 to IRQ7.
DC Characteristics
P34*
P52*
P56*
7*
STBY,
MD2, MD1
RES, NMI, FWE
EXTAL
Port 1 to Port 9,
Port A*
RES, STBY,
MD2, MD1, FWE
NMI, EXTAL
Port 1 to Ports 9,
Port A*
All output pins
All output pins
RES
STBY, NMI,
MD2, MD1, FWE
CC
1
= 3.0 V to 3.6 V, V
, PA0*
1
1
1
, P35*
, P53*
, P57*
2
2
1
, PA1*
1
1
1
,
,
, port
1
Symbol
VT
VT
VT
V
V
V
V
| l
IH
IL
OH
OL
in
SS
−
+
+
|
− VT
= 0 V
−
Min.
V

V
V
V
V
2.2
−0.3
−0.3
−0.3
V
V



CC
CC
CC
CC
CC
CC
CC
× 0.2
× 0.05
× 0.9
× 0.9
× 0.7
− 0.5
− 1.0
Typ.















Max.

V

V
V
V
V
V
V
V


0.4
10.0
1.0
CC
CC
CC
CC
CC
CC
CC
CC
× 0.7
+ 0.3
+ 0.3
+ 0.3
+ 0.3
× 0.1
× 0.2
× 0.2
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
Test
Conditions
I
I
I
V
V
OH
OH
OL
in
CC
= 1.6 mA
= −200 µA
= −1 mA
= 0.5 to
- 0.5 V