DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 490

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

• Command, H'58, (one byte): Erasure
• Size, (one byte): The number of bytes that represents the block number
• Block number (one byte): H'FF
• SUM (one byte): Checksum
• Response, H'06, (one byte): Response to end of erasure (ACK)
Memory read: The boot program will return the data in the specified address.
• Command: H'52 (1 byte): Memory read
• Size (1 byte): Amount of data that represents the area, read address, and read size (fixed at 9)
• Area (1 byte)
• Read address (4 bytes): Start address to be read from
• Read size (4 bytes): Size of data to be read
• SUM (1 byte): Checksum
• Response: H'52 (1 byte): Response to memory read
• Read size (4 bytes): Size of data to be read
• Data (n bytes): Data for the read size from the read address
• SUM (1 byte): Checksum
Rev. 2.00, 03/04, page 456 of 534
Command
Response
Command
Response
This is fixed to 1.
Stop code for erasure
When erasure is to be performed after the block number H′FF has been sent, the procedure
should be executed from the erasure selection command.
H'00: User boot MAT
H'01: User MAT
An address error occurs when the area setting is incorrect.
H'58
H'06
H'52
Read size
H'52
Data
SUM
Size
Size
Read size
···
Block number
Area
Read address
SUM
SUM