DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 452

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
MAT switching is enabled by writing a specific value to FMATS. However note that while the
MATs are being switched, the LSI is in an unstable state, e.g. access to a MAT is not allowed until
MAT switching is completed, and if an interrupt occurs, from which MAT the interrupt vector is
read is undetermined. Perform MAT switching in accordance with the description in section 14.6,
Switching between User MAT and User Boot MAT.
Except for MAT switching, the erasing procedure is the same as that in user program mode.
The area that can be executed in the steps of the user procedure program (on-chip RAM, user
MAT, and external space) is shown in section 14.4.4, Procedure Program and Storable Area for
Programming Data.
14.4.4
In the descriptions in the previous section, the programming/erasing procedure programs and
storable areas for program data are assumed to be in the on-chip RAM. However, the program and
the data can be stored in and executed from other areas, such as part of flash memory which is not
to be programmed or erased, or somewhere in the external address space.
Conditions that Apply to Programming/Erasing:
1. The on-chip programming/erasing program is downloaded from the address in the on-chip
2. The on-chip programming/erasing program will use 128 bytes at the maximum as a stack. So,
3. Download by setting the SCO bit to 1 will lead to switching of the MAT. If, therefore, this
4. The flash memory is accessible until the start of programming or erasing, that is, until the
5. The flash memory is not accessible during programming/erasing operations, therefore, the
Rev. 2.00, 03/04, page 418 of 534
RAM specified by FTDAR, therefore, this area is not available for use.
make sure that this area is secured.
operation is used, it should be executed from the on-chip RAM.
result of downloading has been determined. When in a mode in which the external address
space is not accessible, such as single-chip mode, the required procedure programs, NMI
handling vector and NMI handler should be transferred to the on-chip RAM before
programming/erasing of the flash memory starts.
operation program is downloaded to the on-chip RAM to be executed. The NMI-handling
vector and programs such as that which activate the operation program, and NMI handler
should thus be stored in on-chip memory other than flash memory or the external address
space.
Procedure Program and Storable Area for Programming Data

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