DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 411

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
14.1.3
Flash MAT Configuration
This LSI's flash memory is configured by the 256-kbyte user MAT and 8-kbyte user boot MAT.
The start address is allocated to the same address in the user MAT and user boot MAT. Therefore,
when the program execution or data access is performed between two MATs, the MAT must be
switched by using FMATS.
The user MAT or user boot MAT can be read in all modes. However, the user boot MAT can be
programmed only in boot mode and programmer mode.
<User MAT>
<User Boot MAT>
Address H'000000
Address H'000000
8 kbytes
Address H'001FFF
256 kbytes
Address H'03FFFF
Figure 14.3 Flash Memory Configuration
The size of the user MAT is different from that of the user boot MAT. An address which exceeds
the size of the 8-kbyte user boot MAT should not be accessed. If the attempt is made, data is read
as undefined value.
Rev. 2.00, 03/04, page 377 of 534

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