DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 468

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
14.8
Along with its on-board programming mode, this LSI also has a programmer mode as a further
mode for the writing and erasing of programs and data. In the programmer mode, a general-
purpose PROM programmer can freely be used to write programs to the on-chip ROM.
Program/erase is possible on the user MAT and user boot MAT. The PROM programmer must
support Renesas Technology’s microcomputers with 258-kbyte flash memory as a device type*.
Figure 14.20 shows a memory map in programmer mode.
A status-polling system is adopted for operation in automatic program, automatic erase, and
status-read modes. In the status-read mode, details of the system's internal signals are output after
execution of automatic programming or automatic erasure. In programmer mode, provide a 12-
MHz input-clock signal.
Note: * In this LSI, set the programming voltage of the PROM programmer to 3.3 V.
Rev. 2.00, 03/04, page 434 of 534
Programmer Mode
MCU mode
H'000000
H'03FFFF
Figure 14.20 Memory Map in Programmer Mode
On-chip ROM area
This LSI
Programmer mode
H'00000
H'3FFFF

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