DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 131

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

6.3.7
DRACCR is used to set the DRAM interface bus specifications.
Bit
7, 6
5
4
3, 2
Bit Name

TPC1
TPC0

DRAM Access Control Register (DRACCR)
Address
RAST = 0 RAS
RAST = 1 RAS
UCAS, LCAS
(2-State Column Address Output Cycle, Full Access)
Initial
Value
All 0
0
0
All 0
Figure 6.4 RAS Signal Assertion Timing
R/W
R/W
R/W
R/W
R/W
T
p
Row address
Reserved
These bits can be read from or written to. However, the
write value should always be 0.
Precharge State Control
These bits select the number of states in the RAS
precharge cycle in normal access and refreshing.
00: 1 state
01: 2 states
10: 3 states
11: 4 states
Reserved
These bits can be read from or written to. However, the
write value should always be 0.
Description
T
r
Bus cycle
T
c1
Column address
Rev. 2.00, 03/04, page 97 of 534
T
c2