DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 180

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

Idle Cycle in Case of DRAM Space Access after Normal Space Access: In a DRAM space
access following a normal space access, the settings of bits IDLE1, IDLE0, IDLC1, and IDLC0 in
BCR are valid. However, in the case of consecutive reads in different areas, for example, if the
second read is a full access to DRAM space, idle cycles include T
and T
cycles. The timing when
p
i
a four-state idle cycle is inserted in a full access to DRAM space is shown in figure 6.48.
External read
DRAM space read
T
T
T
T
T
T
T
T
T
1
2
3
p
r
i
i
c1
c2
φ
Address bus
Data bus
Figure 6.48 Example of DRAM Full Access after External Read (CAST = 0)
In burst access in RAS down mode, the settings of bits IDLE1, IDLE0, IDLC1, and IDLC0 are
valid and an idle cycle is inserted. The timing in this case is illustrated in figure 6.49.
Rev. 2.00, 03/04, page 146 of 534