DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 162

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

6.6.8
When DRAM is accessed, a RAS precharge time must be secured. With this LSI, one T
always inserted when DRAM space is accessed. From one to four T
setting bits TPC1 and TPC0 in DRACCR. Set the optimum number of T
DRAM connected and the operating frequency of this LSI. Figure 6.26 shows the timing when
two T
cycles.
Rev. 2.00, 03/04, page 128 of 534
Figure 6.26 Example of Timing with Two-State Precharge Cycle (RAST = 0, CAST = 0)
Read
Write
p
states are inserted. The setting of bits TPC1 and TPC0 is also valid for T
Precharge State Control
φ
Address bus
Data bus
Data bus
(
(
(
(
(
,
)
)
)
)
)
T
p1
Row address
T
p2
High
High
T
r
p
states can be selected by
T
c1
Column address
p
cycles according to the
p
states in refresh
T
c2
p
state is