DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 495

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

14.10
1. The initial state of the Renesas Technology's product at its shipment is in the erased state. For
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
3. If the socket, socket adapter, or product index does not match the specifications, too much
4. If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
5. Do not remove the chip from the PROM programmer nor input a reset signal during
6. The flash memory is not accessible until FKEY is cleared after programming/erasing
7. At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
8. Program the area with 128-byte programming-unit blocks in on-board programming or
9. When the chip is to be reprogrammed with the programmer after execution of programming or
10. To write data or programs to the flash memory, data or programs must be allocated to
the product whose revision of erasing is undefined, we recommend to execute automatic
erasure for checking the initial state (erased state) and compensating.
refer to the instruction manual of the socket adapter.
current flows and the product may be damaged.
PROM programmer that supports the Renesas Technology's 256 kbytes flash memory on-chip
MCU device at 3.3 V. Do not set the programmer to HN28F101 or the programming voltage to
5.0 V. Use only the specified socket adapter. If other adapters are used, the product may be
damaged.
programming/erasing. As a high voltage is applied to the flash memory during
programming/erasing, doing so may damage or destroy flash memory permanently. If reset is
executed accidentally, reset must be released after the reset input period of 100 µs which is
longer than normal.
completes. If this LSI is restarted by a reset immediately after programming/erasing has
finished, secure the reset period (period of RES = 0) of more than 100 µs. Though transition to
the reset state or hardware standby state during programming/erasing is prohibited, if reset is
executed accidentally, reset must be released after the reset input period of 100 µs which is
longer than normal.
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
programmer mode only once. Perform programming in the state where the programming-unit
block is fully erased.
erasure in on-board programming mode, it is recommended that automatic programming is
performed after execution of automatic erasure.
addresses higher than that of the external interrupt vector table (H'000040) and H’FF must be
written to the areas that are reserved for the system in the exception handling vector table.
Usage Notes
Rev. 2.00, 03/04, page 461 of 534