DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 163

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

6.6.9
When inserting wait states in a DRAM access cycle, program wait insertion is specified.
Wait states are inserted to extend the CAS assertion period in a read access to DRAM space, and
to extend the write data setup time relative to the falling edge of CAS in a write access.
When the AST2 bit in ACSCR is set to 1, from 0 to 7 wait states can be inserted automatically
between the T
Figures 6.27 and 6.28 show examples of wait cycle insertion timing in the case of 2-state and 3-
state column address output cycles.
Figure 6.27 Example of Wait State Insertion Timing (2-State Column Address Output)
Read
Write
Wait Control
c1
state and T
φ
Address bus
Data bus
Data bus
(
(
(
(
,
,
)
)
)
)
c2
state, according to the settings of WTCR.
T
Row address
p
T
r
High
High
T
c1
Column address
T
w
Rev. 2.00, 03/04, page 129 of 534
T
w
T
c2