DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 174

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

6.6.13
When burst mode is selected on the DRAM interface, the DACK output timing can be selected
with the DDS bit in DRAMCR. When DRAM space is accessed in DMAC single address mode at
the same time, this bit selects whether or not burst access is to be performed.
When DDS = 1: Burst access is performed by determining the address only, irrespective of the
bus master. With the DRAM interface, the DACK output goes low from the T
Figure 6.42 shows the DACK output timing for the DRAM interface when DDS = 1.
Rev. 2.00, 03/04, page 140 of 534
φ
Address bus
Data bus
Figure 6.41 Example of Timing when Precharge Time after Self-Refreshing is Extended
(
(
(
,
)
DMAC Single Address Transfer Mode and DRAM Interface
)
)
Software
standby
T
rc3
by 2 States
T
rp1
T
rp2
T
p
DRAM space write
T
r
c1
T
state.
c1
T
c2