DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 462
DF2170VTE33
Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.DF2170BVTE33V.pdf
(572 pages)
Specifications of DF2170VTE33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33
HD64F2170VTE33
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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14.5
There are two kinds of flash memory program/erase protection: hardware and software protection.
14.5.1
Programming and erasing of flash memory is forcibly disabled or suspended by hardware
protection. In this state, the downloading of an on-chip program and initialization are possible.
However, an activated program for programming or erasure cannot program or erase locations in a
user MAT, and the error in programming/erasing is reported in the parameter FPFR.
Table 14.10 Hardware Protection
Rev. 2.00, 03/04, page 428 of 534
Item
FWE pin protection
Reset/standby
protection
Protection
Hardware Protection
Description
•
•
•
When a low level signal is input to the
FWE pin, the FWE bit in FCCS is
cleared and the program/erase-
protected state is entered.
The program/erase interface registers
are initialized in the reset state
(including a reset by the WDT) and
standby mode and the program/erase-
protected state is entered.
The reset state will not be entered by
a reset using the RES pin unless the
RES pin is held low until oscillation
has stabilized after power is initially
supplied. In the case of a reset during
operation, hold the RES pin low for the
RES pulse width that is specified in
the section on AC characteristics. If a
reset is input during programming or
erasure, data values in the flash
memory are not guaranteed. In this
case, execute erasure and then
execute program again.
Download
Function to be Protected
Program/Erase
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