DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 407

• Manufacturer Part Number: DF2170VTE33
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2170VTE33; HD64F2170VTE33

The flash memory has the following features. Figure 14.1 shows a block diagram of the flash
memory.
14.1
• Size
• Two flash-memory MATs according to LSI initiation mode
• Programming/erasing interface by the download of on-chip program
• Programming/erasing time
• Number of programming
• Three on-board programming modes
Product Classification
H8S/2170
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
 The user memory MAT is initiated at a power-on reset in user mode: 256 kbytes
 The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
The flash memory programming time is 3 ms (typ) in 128-byte simultaneous programming and
approximately 25 µs per byte. The erasing time is 1000 ms (typ) per 64-kbyte block.
The number of flash memory programming can be up to 100 times at the minimum. (The value
ranged from 1 to 100 is guaranteed.)
 Boot mode
 User program mode
 User boot mode
Section 14 Flash Memory (0.18-µm F-ZTAT Version)
This mode is a program mode that uses an on-chip SCI interface. The user MAT and user
boot MAT can be programmed. This mode can automatically adjust the bit rate between
host and this LSI.
The user MAT can be programmed by using the optional interface.
The user boot program of the optional interface can be made and the user MAT can be
programmed.
Features
HD64F2170
ROM Size
256 kbytes
ROM Address
H'000000 to H'03FFFF
Rev. 2.00, 03/04, page 373 of 534