DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 488

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
• Error Response, H'D0, (one byte): Error response for 128-byte programming
• ERROR: (one byte): Error code
Erasure: Erasure is performed with the erasure selection and block erasure command.
Firstly, erasure is selected by the erasure selection command and the boot program then erases the
specified block. The command should be repeatedly executed if two or more blocks are to be
erased. Sending a block-erasure command from the host with the block number H'FF will stop the
erasure operating. On completion of erasing, the boot program will wait for selection of
programming or erasing.
The sequences of the issuing of erasure selection commands and the erasure of data are shown in
figure 14.26.
Rev. 2.00, 03/04, page 454 of 534
Error Response
Repeat
H'11: Checksum error
H'2A: Address Error
H'53: Programming error
An error has occurred in programming and programming cannot be continued.
H'D0
Host
ERROR
Figure 14.26 Erasure Sequence
Preparation for erasure (H'48)
Erasure (Erasure block number)
Erasure (H'FF)
ACK
ACK
ACK
Transfer of erasure
Boot program
Erasure
program

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