DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 178

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Read after Write: If an external read occurs after an external write while the IDLE1 and IDLE0
bits in BCR are set to B'11, an idle cycle which is set by the IDLC1 and IDLC0 bits in BCR is
inserted at the start of the read cycle.
Figure 6.46 shows an example of the operation in this case. In this example, bus cycle A is a CPU
write cycle and bus cycle B is a read cycle from the SRAM. In (a), an idle cycle is not inserted,
and a collision occurs in bus cycle B between the CPU write data and read data from the SRAM.
In (b), an idle cycle is inserted, and a data collision is prevented.
Rev. 2.00, 03/04, page 144 of 534
Address bus
Data bus
(area A)
(area B)
φ
Figure 6.45 Example of Idle Cycle Operation (Write after Read)
T
1
(a) No idle cycle insertion
Bus cycle A
Long output floating time
(IDLE1 = 0, IDLE0 = 0)
T
2
y
T
3
Bus cycle B
T
1
T
2
Data collision
Address bus
Data bus
(area A)
(area B)
φ
(b) Idle cycle insertion
T
1
Bus cycle A
(IDLE1 = 0, IDLE0 = 0, IDLC1 = 0,
IDLC0 = 0)
T
2
T
3
Idle cycle
T
i
Bus cycle B
T
1
T
2

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