DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 425

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 14.4 Flash Memory Area Divisions
14.3.2
The programming/erasing interface parameter specifies the operating frequency, storage place for
program data, programming destination address, and erase block and exchanges the processing
result for the downloaded on-chip program. This parameter uses the general registers of the CPU
(ER0 and ER1) or the on-chip RAM area. The initial value is undefined at a reset or in hardware
standby mode.
When download, initialization, or on-chip program is executed, registers of the CPU except for
R0L are stored. The return value of the processing result is written in R0L. Since the stack area is
used for storing the registers except for R0L, the stack area must be saved at the processing start.
(A maximum size of a stack area to be used is 132 bytes.)
The programming/erasing interface parameter is used in the following four items.
1. Download control
2. Initialization before programming or erasing
3. Programming
4. Erasing
These items use different parameters. The correspondence table is shown in table 14.5. The
meaning of the bits in FPFR varies in each processing program: initialization, programming, or
erasure. For details, see descriptions of FPFR for each process.
RAM Area
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
Programming/Erasing Interface Parameter
Block Name
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
RAM2
0
0
0
0
1
1
1
1
Rev. 2.00, 03/04, page 391 of 534
RAM1
0
0
1
1
0
0
1
1
RAM0
0
1
0
1
0
1
0
1

Related parts for DF2170VTE33