HD64F7047FW40V Renesas Electronics America, HD64F7047FW40V Datasheet - Page 691

• Manufacturer Part Number: HD64F7047FW40V
• Description: MCU 5V 256K I-TEMP,PB-FREE 100-Q
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7047r

Specifications of HD64F7047FW40V

• Core Processor: SH-2
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CAN, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Notes: 1. Make each time setting in accordance with the program/program-verify algorithm or
Item
Erase
2. Programming time per 128 bytes (shows the total period for which the P-bit in the flash
3. 1-Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
4. To specify the maximum programming time value (t
5. For the maximum erase time (t
6. See page 2 for correspondence of the standard product, wide temperature-range
8. Reference value at 25°C (A rough rewriting target number to which a rewriting usually
9. Data retention characteristics when rewriting is executed within the specification values
7. All characteristics after rewriting are guaranteed up to this minimum rewriting times
erase/erase-verify algorithm.
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000: t
[In additional programming]
Programming counter (n) = 1 to 6:
wait time after E bit setting (t
To set the maximum erase time, the values of (t
the above formula.
Examples: When t
product, and product model name.
(therefore 1 to min. times).
functions)
including minimum values.
Symbol
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
t
When t
E
(max) = Wait time after E bit setting (t
se
se
= 100 ms, N = 12 times
= 10 ms, N = 120 times
1,
*
5
1
se
1
1
1
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
1
Min
t
t
t
t
t
N
cesu
sev
sevr
cev
cswe
t
sp30
sp200
t
sp10
= 30 µs
= 200 µs
= 10 µs
Typ
10
20
2
4
100
12
se
) and (N) should be set so as to satisfy
p
se
Max
10
20
2
4
100
—
) x maximum erase count (N)
(max)) in the 128-bytes
Rev. 2.00, 09/04, page 649 of 720
Unit
—
—
—
—
—
120
Remarks Item
µs
µs
µs
µs
µs
Times